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APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
* * * *
30V/6A , RDS(ON)=21m(typ.) @ VGS=10V RDS(ON)=27m(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
Pin Description
SO-8
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
Top View
Applications
*
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G1
D1
D1
D2
D2
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM 7313
H a n d lin g C o d e Tem p. R ange P ackage C ode P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel
APM 7313 K :
APM 7313 XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 30 20 V Unit
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw
APM7313
Absolute Maximum Ratings (Cont.)
Symbol ID
*
(TA = 25C unless otherwise noted)
Rating 6 24 2.5 1.0 150 -55 to 150 50 A W W C C C/W Unit
Parameter Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Maximum Power Dissipation TA=25C TA=100C
IDM PD
TJ TSTG RjA
Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa
b
(TA = 25C unless otherwise noted)
Test Condition APM7313 Min. Typ. Max. Unit
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VGS=0V , IDS=250A VDS=24V , VGS=0V VDS=VGS , IDS=250A VGS=20V , VDS=0V VGS=10V , IDS=3.5A VGS=4.5V , IDS=2A ISD=2A , VGS=0V VDS=15V , IDS= 10A VGS=10V
30 1 1 1.5 21 27 0.7 30 5.8 3.8 11 22 33 68 38 2 100 28 42 1.3 36
V A V nA m V
Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
VDD=15V , IDS=2A , VGEN=10V , RG=6 VGS=0V
17 37 20 1200 210 95
ns
VDS=25V Reverse Transfer Capacitance Frequency=1.0MHz
pF
Notes
a b
: Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing
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Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003
APM7313
Typical Characteristics
Output Characteristics
30 40
Transfer Characteristics
25
VGS=4,4.5,6,8,10V
IDS-Drain Current (A)
20
IDS-Drain Current (A)
30
15
VGS=3.5V
20
TJ=25C
10
V GS=3V
5
10
TJ=125C
TJ=-55C
VGS=2.5V
0 1 2 3 4 5 6 7 8 9 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
On-Resistance vs. Drain Current
0.050
IDS=250A
VGS(th)-Threshold Voltage (V) (Normalized)
0.045
RDS(ON)-On-Resistance ()
1.0
0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005
VGS=4.5V
0.8
VGS=10V
0.6
0.4 -50
-25
0
25
50
75
100
125
150
0.000 0 5 10 15 20 25 30
Tj-Junction Temperature (C)
IDS-Drain Current (A)
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APM7313
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.050 0.045
On-Resistaence vs. Junction Temperature
RDS(ON)-On Resistance () (Normalized)
1.6
IDS=3.5A
RDS (ON) - On-Resistance ()
VGS=10V IDS=3.5A
1.4
0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 10
1.2
1.0
0.8
0.6 -50
-25
0
25
50
75
100
125
150
Gate Voltage (V)
Tj-Junction Temperature (C)
Gate Charge
10
2000
Capacitance Characteristics
VGS-Gate-to-Source Voltage (V)
V DS= 1 5 V I DS= 1 0 A
8
1000
Ciss
C-Capacitance (pF)
500
6
Coss
4
2
100
Crss Frequency=1MHz
0
0
5
10
15
20
25
30
0.1
1
10
30
QG-Total Gate Charge (nC)
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003
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APM7313
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
100
Single Pulse Power
80
ISD-Source Current (A)
60
Power (W)
TJ=125C TJ=25C TJ=-55C
10
40
1
20
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0.01
0.1
1
10
VSD-Source to Drain Voltage
Time (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted
D=0.02 SINGLE
0.01 1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003
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APM7313
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
Inche s
0.004max.
Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
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APM7313
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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APM7313
Reliability test program
Test item SOLDERABILITY HOLT PCT TST ESD Latch-Up Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 MIL-STD-883D-3015.7 JESD 78 Description 245C , 5 SEC 1000 Hrs Bias @ 125 C 168 Hrs, 100 % RH , 121C -65C ~ 150C, 200 Cycles VHBM > 2KV, VMM > 200V 10ms , Itr > 100mA
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
SOP-8 Application SOP-8
A 3301 F 5.5 0.1
B 62 1.5
C 12.75 + 0.1 5
J 2 + 0.5
T1 12.4 +0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 + 0.3 - 0.1 Bo 5.2 0.1
P 8 0.1
E 1.75 0.1
D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1
Ko t 2.1 0.1 0.30.013
(mm)
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APM7313
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003
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